IRF7663TRPBF

Infineon Technologies

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IRF7663TRPBF

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Micro8™

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Description:

MOSFET P-CH 20V 8.2A MICRO8

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	20mOhm @ 7A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.2V @ 250µA
Supplier Device Package	Micro8™
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.8W (Ta)
Series	HEXFET®
Package / Case	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	8.2A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)