IRF7807VD2

Infineon Technologies

Product No:

IRF7807VD2

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Package:

8-SO

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Description:

MOSFET N-CH 30V 8.3A 8SO

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	25mOhm @ 7A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	8-SO
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.5W (Ta)
Series	FETKY™
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	8.3A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Package	Tube