IRFB42N20DPBF

Infineon Technologies

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IRFB42N20DPBF

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TO-220AB

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Description:

MOSFET N-CH 200V 44A TO220AB

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	140 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	55mOhm @ 26A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5.5V @ 250µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	2.4W (Ta), 330W (Tc)
Series	HEXFET®
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	44A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube