IRFH5110TRPBF

Infineon Technologies

Product No:

IRFH5110TRPBF

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Package:

8-PQFN (5x6)

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Description:

MOSFET N-CH 100V 11A/63A 8PQFN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3152 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12.4mOhm @ 37A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 100µA
Supplier Device Package	8-PQFN (5x6)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3.6W (Ta), 114W (Tc)
Series	HEXFET®
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 63A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IRFH5110