IRFU3410PBF

Infineon Technologies

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IRFU3410PBF

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IPAK (TO-251AA)

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Description:

MOSFET N-CH 100V 31A IPAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1690 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	39mOhm @ 18A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	IPAK (TO-251AA)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3W (Ta), 110W (Tc)
Series	HEXFET®
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IRFU3410