IRFU9N20D

Infineon Technologies

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IRFU9N20D

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IPAK (TO-251AA)

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Description:

MOSFET N-CH 200V 9.4A IPAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	380mOhm @ 5.6A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5.5V @ 250µA
Supplier Device Package	IPAK (TO-251AA)
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	86W (Tc)
Series	HEXFET®
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	9.4A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube