IRLB8314PBF

Infineon Technologies

Product No:

IRLB8314PBF

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Package:

TO-220-3

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Description:

MOSFET N-CH 30V 171A TO220-3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5050 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 4.5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.4mOhm @ 68A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 100µA
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	125W (Tc)
Series	HEXFET®
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	171A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	IRLB8314