IRLBD59N04ETRLP

Infineon Technologies

Product No:

IRLBD59N04ETRLP

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Package:

TO-263-5

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Description:

MOSFET N-CH 40V 59A TO263-5

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	18mOhm @ 35A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	TO-263-5
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	130W (Tc)
Series	HEXFET®
Package / Case	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	59A (Tc)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Tape & Reel (TR)