IRLR3410PBF-INF

Infineon Technologies

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IRLR3410PBF-INF

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D-Pak

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Description:

HEXFET POWER MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	105mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	D-Pak
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	79W (Tc)
Series	HEXFET®
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Bulk