IRLR4343-701PBF

Infineon Technologies

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IRLR4343-701PBF

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I-PAK (LF701)

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Description:

MOSFET N-CH 55V 26A IPAK

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Operating Temperature	-40°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	740 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	50mOhm @ 4.7A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	I-PAK (LF701)
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	79W (Tc)
Series	HEXFET®
Package / Case	TO-252-4, DPak (3 Leads + Tab)
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	26A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube