IRLU3802PBF

Infineon Technologies

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IRLU3802PBF

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I-PAK

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Description:

MOSFET N-CH 12V 84A I-PAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2490 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	8.5mOhm @ 15A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.9V @ 250µA
Supplier Device Package	I-PAK
Drain to Source Voltage (Vdss)	12 V
Power Dissipation (Max)	88W (Tc)
Series	HEXFET®
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	84A (Tc)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.8V, 4.5V
Package	Tube