IRLZ24NLPBF

Infineon Technologies

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IRLZ24NLPBF

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TO-262

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Description:

MOSFET N-CH 55V 18A TO262

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	60mOhm @ 11A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	TO-262
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	3.8W (Ta), 45W (Tc)
Series	HEXFET®
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tube