ISC104N12LM6ATMA1

Infineon Technologies

Product No:

ISC104N12LM6ATMA1

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Package:

PG-TDSON-8

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Description:

OPTIMOS 6 POWER-TRANSISTOR,120V

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10.4mOhm @ 28A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 35µA
Supplier Device Package	PG-TDSON-8
Drain to Source Voltage (Vdss)	120 V
Power Dissipation (Max)	3W (Ta), 94W (Tc)
Series	OptiMOS™ 6
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 63A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	3.3V, 10V
Package	Tape & Reel (TR)
Base Product Number	ISC104