NX2301P,215

NXP Semiconductors

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NX2301P,215

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SOT-23

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Description:

20 V, 2 A P-CHANNEL TRENCH MOSFE

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	120mOhm @ 1A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.1V @ 250µA
Supplier Device Package	SOT-23
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	400mW (Ta), 2.8W (Tc)
Series	Automotive, AEC-Q101, TrenchMOS™
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Bulk