PHK12NQ03LT,518

NXP Semiconductors

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PHK12NQ03LT,518

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8-SO

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NEXPERIA PHK12NQ03LT - 11.8A, 30

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1335 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs	17.6 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10.5mOhm @ 12A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	8-SO
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.5W (Ta)
Series	TrenchMOS™
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	11.8A (Tj)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk