PMZB950UPEYL

NXP Semiconductors

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PMZB950UPEYL

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Package:

DFN1006B-3

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NOW NEXPERIA PMZB950UPE - SMALL

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	43 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	2.1 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.4Ohm @ 500mA, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	950mV @ 250µA
Supplier Device Package	DFN1006B-3
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	360mW (Ta), 2.7W (Tc)
Series	-
Package / Case	SC-101, SOT-883
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	500mA (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Package	Bulk