PSMN018-100ESFQ

NXP Semiconductors

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PSMN018-100ESFQ

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I2PAK

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Description:

NEXPERIA PSMN018 - NEXTPOWER 100

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1482 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	21.4 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	18mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	I2PAK
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	111W (Ta)
Series	-
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	53A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Package	Bulk