PSMN9R5-100BS,118

NXP Semiconductors

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PSMN9R5-100BS,118

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D2PAK

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NOW NEXPERIA PSMN9R5-100BS - 89A

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4454 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	82 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	9.6mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	D2PAK
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	211W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	89A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk