Infineon Technologies
Product No:
SPB10N10L
Manufacturer:
Package:
PG-TO263-3-2
Batch:
-
Description:
MOSFET N-CH 100V 10.3A TO263-3
Quantity:
Delivery:
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 444 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 154mOhm @ 8.1A, 10V |
Product Status | Obsolete |
Vgs(th) (Max) @ Id | 2V @ 21µA |
Supplier Device Package | PG-TO263-3-2 |
Drain to Source Voltage (Vdss) | 100 V |
Power Dissipation (Max) | 50W (Tc) |
Series | SIPMOS® |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Mfr | Infineon Technologies |
Current - Continuous Drain (Id) @ 25°C | 10.3A (Tc) |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | SPB10N |