Infineon Technologies
Product No:
SPP11N65C3XKSA1
Manufacturer:
Package:
PG-TO220-3-1
Batch:
-
Description:
MOSFET N-CH 650V 11A TO220-3
Quantity:
Delivery:
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 380mOhm @ 7A, 10V |
Product Status | Obsolete |
Vgs(th) (Max) @ Id | 3.9V @ 500µA |
Supplier Device Package | PG-TO220-3-1 |
Drain to Source Voltage (Vdss) | 650 V |
Power Dissipation (Max) | 125W (Tc) |
Series | CoolMOS™ |
Package / Case | TO-220-3 |
Technology | MOSFET (Metal Oxide) |
Mfr | Infineon Technologies |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tube |
Base Product Number | SPP11N |