SSM5G10TU(TE85L,F)

Toshiba Semiconductor and Storage

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SSM5G10TU(TE85L,F)

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Package:

UFV

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Description:

MOSFET P-CH 20V 1.5A UFV

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Operating Temperature	150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	6.4 nC @ 4 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	213mOhm @ 1A, 4V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 1mA
Supplier Device Package	UFV
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	500mW (Ta)
Series	U-MOSIII
Package / Case	6-SMD (5 Leads), Flat Lead
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	1.5A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4V
Package	Tape & Reel (TR)
Base Product Number	SSM5G10