TJ20A10M3(STA4,Q

Toshiba Semiconductor and Storage

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TJ20A10M3(STA4,Q

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TO-220SIS

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TJ20A10M3(STA4,Q

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Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	5500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	90mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-220SIS
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	35W (Tc)
Series	U-MOSVI
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TJ20A10