TK18E10K3,S1X(S

Toshiba Semiconductor and Storage

Product No:

TK18E10K3,S1X(S

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Package:

TO-220-3

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Description:

MOSFET N-CH 100V 18A TO220-3

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	42mOhm @ 9A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	-
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	-
Series	U-MOSIV
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	18A (Ta)
Package	Tube
Base Product Number	TK18E10