TK190U65Z,RQ

Toshiba Semiconductor and Storage

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TK190U65Z,RQ

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TOLL

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Description:

DTMOS VI TOLL PD=130W F=1MHZ

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	190mOhm @ 7.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 610µA
Supplier Device Package	TOLL
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	130W (Tc)
Series	DTMOSVI
Package / Case	8-PowerSFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	15A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)