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TK20A60W5,S5VX

Toshiba Semiconductor and Storage

Product No:

TK20A60W5,S5VX

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 20A TO220SIS

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 175mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 1mA
Supplier Device Package TO-220SIS
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 45W (Tc)
Series DTMOSIV
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK20A60