TK3R9E10PL,S1X

Toshiba Semiconductor and Storage

Product No:

TK3R9E10PL,S1X

Manufacturer:

Package:

TO-220

Batch:

Datasheet:

Description:

X35 PB-F POWER MOSFET TRANSISTOR

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6320 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	96 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.9mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	230W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	TK3R9E10