TK40J20D,S1F(O

Toshiba Semiconductor and Storage

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TK40J20D,S1F(O

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TO-3P(N)

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Description:

MOSFET N-CH 200V 40A TO3P

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4300 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	100 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	44mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 1mA
Supplier Device Package	TO-3P(N)
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	260W (Tc)
Series	π-MOSVIII
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tray
Base Product Number	TK40J20