TK4P60DA(T6RSS-Q)

Toshiba Semiconductor and Storage

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TK4P60DA(T6RSS-Q)

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D-Pak

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Description:

MOSFET N-CH 600V 3.5A DPAK

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.2Ohm @ 1.8A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.4V @ 1mA
Supplier Device Package	D-Pak
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	80W (Tc)
Series	π-MOSVII
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TK4P60