TK4R3E06PL,S1X

Toshiba Semiconductor and Storage

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TK4R3E06PL,S1X

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Package:

TO-220

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Description:

MOSFET N-CH 60V 80A TO220

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Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3280 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	48.2 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	7.2mOhm @ 15A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 500µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	87W (Tc)
Series	U-MOSIX-H
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	TK4R3E06