TK55S10N1,LXHQ

Toshiba Semiconductor and Storage

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TK55S10N1,LXHQ

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DPAK+

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MOSFET N-CH 100V 55A DPAK

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6.5mOhm @ 27.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 500µA
Supplier Device Package	DPAK+
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	157W (Tc)
Series	U-MOSVIII-H
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	55A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TK55S10