TK7E80W,S1X

Toshiba Semiconductor and Storage

Product No:

TK7E80W,S1X

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Package:

TO-220

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Description:

MOSFET N-CH 800V 6.5A TO220

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	950mOhm @ 3.3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 280µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	110W (Tc)
Series	DTMOSIV
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	6.5A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK7E80