TPC6012(TE85L,F,M)

Toshiba Semiconductor and Storage

Product No:

TPC6012(TE85L,F,M)

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Package:

VS-6 (2.9x2.8)

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Description:

MOSFET N-CH 20V 6A VS-6

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	20mOhm @ 3A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.2V @ 200µA
Supplier Device Package	VS-6 (2.9x2.8)
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	700mW (Ta)
Series	U-MOSIV
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	TPC6012