TPC6104(TE85L,F,M)

Toshiba Semiconductor and Storage

Product No:

TPC6104(TE85L,F,M)

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Package:

VS-6 (2.9x2.8)

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Description:

MOSFET P-CH 20V 5.5A VS-6

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	40mOhm @ 2.8A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.2V @ 200µA
Supplier Device Package	VS-6 (2.9x2.8)
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	700mW (Ta)
Series	U-MOSIII
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	5.5A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	TPC6104