TPC8062-H,LQ(CM

Toshiba Semiconductor and Storage

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TPC8062-H,LQ(CM

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8-SOP

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Description:

MOSFET N-CH 30V 18A 8SOP

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5.8mOhm @ 9A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.3V @ 300µA
Supplier Device Package	8-SOP
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1W (Ta)
Series	U-MOSVII-H
Package / Case	8-SOIC (0.173", 4.40mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	18A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPC8062