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TPCC8005-H(TE12LQM

Toshiba Semiconductor and Storage

Product No:

TPCC8005-H(TE12LQM

Package:

8-TSON Advance (3.3x3.3)

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 30V 26A 8TSON

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.4mOhm @ 13A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.3V @ 500µA
Supplier Device Package 8-TSON Advance (3.3x3.3)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 700mW (Ta), 30W (Tc)
Series U-MOSVI-H
Package / Case 8-VDFN Exposed Pad
Technology MOSFET (Metal Oxide)
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 26A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number TPCC8005