TPCC8008(TE12L,QM)

Toshiba Semiconductor and Storage

Product No:

TPCC8008(TE12L,QM)

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Package:

8-TSON Advance (3.3x3.3)

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Description:

MOSFET N-CH 30V 25A 8TSON

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6.8mOhm @ 12.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 1A
Supplier Device Package	8-TSON Advance (3.3x3.3)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	700mW (Ta), 30W (Tc)
Series	U-MOSIV
Package / Case	8-VDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	25A (Ta)
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Cut Tape (CT)
Base Product Number	TPCC8008