TPCC8105,L1Q

Toshiba Semiconductor and Storage

Product No:

TPCC8105,L1Q

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Package:

8-TSON Advance (3.3x3.3)

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Description:

PB-F POWER MOSFET TRANSISTOR TSO

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Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	76 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	7.8mOhm @ 11.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 500µA
Supplier Device Package	8-TSON Advance (3.3x3.3)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	700mW (Ta), 30W (Tc)
Series	U-MOSVI
Package / Case	8-VDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	23A (Ta)
Vgs (Max)	+20V, -25V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)