TPCC8136.LQ

Toshiba Semiconductor and Storage

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TPCC8136.LQ

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Package:

8-TSON Advance (3.1x3.1)

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Description:

MOSFET P-CH 20V 9.4A 8TSON

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Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2350 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	16mOhm @ 9.4A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.2V @ 1mA
Supplier Device Package	8-TSON Advance (3.1x3.1)
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	700mW (Ta), 18W (Tc)
Series	U-MOSVI
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	9.4A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	TPCC8136